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2N5115E3
2N5115E3Reference image

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Mfr. #:
2N5115E3
Batch:
new
Description:
JFET P channel 30 V 500 mW Through hole TO-18 (TO-206AA)
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Microchip Technology
Family -
Packaging Bulk
FET Type P Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Drain-Source Voltage (Vdss) 30 V
Current - Drain (Idss) at Vds (Vgs=0) 15 mA @ 15 V
Voltage - Cutoff (VGS off) at Id 3 V @ 1 nA
Input Capacitance (Ciss) at Vds (max) 25pF @ 15V
Resistance - RDS(On) 100 Ohms
Power - max 500 mW
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package/Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Other product information

Advantage price,2N5115E3 in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
100+ $40.2780 $4027.8
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
100
Multiples:
1
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