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IPW60R024P7XKSA1
IPW60R024P7XKSA1Reference image

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Mfr. #:
IPW60R024P7XKSA1
Batch:
new
Description:
Through hole N channel 650 V 101A (Tc) 291W (Tc) PG-TO247-3-41
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? P7
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 101A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 24 milliohms @ 42.4A, 10V
Vgs(th) (max) at Id 4V @ 2.03mA
Gate Charge?(Qg) (max) at Vgs 164 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 7144 pF @ 400 V
FET Function -
Power Dissipation (Max) 291W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package/Case TO-247-3
Other product information

Advantage price,IPW60R024P7XKSA1 in stock can be shipped on the same day

In Stock: 160
Qty.Unit PriceExt. Price
1+ $14.4667 $14.4667
30+ $11.7098 $351.294
120+ $11.0210 $1322.52
510+ $9.9878 $5093.778
1020+ $9.1612 $9344.424
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
160
Minimum:
1
MPQ:
1
Multiples:
1
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